| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has an optimized charge storage layer and is superior in characteristics. Ž<P>SOLUTION: The semiconductor device includes first and second memory cell transistors having an element forming region disposed in a semiconductor substrate 10, tunnel insulating films 11 formed on the element forming region, charge storage insulating layers 12 formed on the tunnel insulating film, a block insulting film 14 formed on the charge storage insulating layer, a control gate electrode 15 formed on the block insulating film, and with an element isolation region 13 formed between the first memory cell transistor and the second memory cell transistor. In cross sections in a channel width direction of the first and second memory cell transistors, an upper face of the element isolation region is higher than a center part of an upper face of the charge accumulation insulting film. In the cross section in the channel width direction, film thickness of an end of the charge storage insulating layer is thinner than that of the center part of the charge storage insulating layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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