摘要 |
PROBLEM TO BE SOLVED: To provide a memory circuit, a system, and an operation method thereof. SOLUTION: A memory circuit includes at least one memory cell, and stores data by a charge system. The memory cell is coupled with a word line and a bit line. The memory circuit includes a means for providing a bit line reference voltage VBL<SB>ref</SB>to the bit line. A ratio of the bit line reference voltage VBL<SB>ref</SB>to a power supply voltage VDD, i.e., a VBL<SB>ref</SB>/VDD ratio, is adjustable corresponding to a change in power supply voltage VDD. COPYRIGHT: (C)2010,JPO&INPIT
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