发明名称 MEMORY CIRCUIT, SYSTEM, AND OPERATION METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a memory circuit, a system, and an operation method thereof. SOLUTION: A memory circuit includes at least one memory cell, and stores data by a charge system. The memory cell is coupled with a word line and a bit line. The memory circuit includes a means for providing a bit line reference voltage VBL<SB>ref</SB>to the bit line. A ratio of the bit line reference voltage VBL<SB>ref</SB>to a power supply voltage VDD, i.e., a VBL<SB>ref</SB>/VDD ratio, is adjustable corresponding to a change in power supply voltage VDD. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010186534(A) 申请公布日期 2010.08.26
申请号 JP20100026486 申请日期 2010.02.09
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD 发明人 HUANG MING-CHIEH;HSU KUOYUAN
分类号 G11C11/4074;G11C11/4091 主分类号 G11C11/4074
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