| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing impurities from being diffused in an active layer. Ž<P>SOLUTION: A laser diode includes: an n-type GaN buffer layer 2 formed on an n-type GaN substrate 1; an n-type clad layer 3 formed thereupon; an n-type guide layer 4 formed thereupon; the active layer 5 formed thereupon; a p-type first guide layer 6 formed thereupon; an overflow prevention layer 7 formed thereupon; an impurity diffusion prevention layer 8 formed thereupon; a p-type GaN second guide layer 9 formed thereupon; and a p-type clad layer 10 formed thereupon. The impurity diffusion prevention layer 8 composed of In<SB>y</SB>Ga<SB>1-y</SB>N is provided in the vicinity of the active layer 5 so that p-type impurities present in the p-type clad layer 10, p-type second guide layer 9, etc., can be accumulated in the impurity diffusion prevention layer 8 and are not diffused in the active layer 5. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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