| 摘要 |
<p>A semiconductor light emitting diode with improved light extraction efficiency, provided with at least a substrate having a plurality of crystal planes, and stacked on said substrate, a barrier layer of a first conductivity type, an active layer serving as a light emitting layer, and a barrier layer of a second conductivity type. The semiconductor light emitting diode is provided with a ridge structure formed by one flat surface in the in-plane direction and at least two inclining surfaces, the width (W) of the flat surface of the ridge structure is 2? (?: light emission wavelength) or less, and the active layer is positioned in the stacking direction in a way so that the shortest length (L) between two points is ? (light emission wavelength) or less, the first point being the earliest point where the light emitted from the center (C) of the active layer begins total internal reflection at the interface between the inclining surfaces of the ridge structure and air, and the second point being a point where the flat surface begins.</p> |
