| 摘要 |
PURPOSE: The radiation device package and manufacturing method thereof directly make something/somebody grow up the emitting device in the conductive type package body. The current characteristic of the emitting device is improved. CONSTITUTION: The insulating layer(120) is formed in the surface of the package body(110) of the first conductivity type. The conductive buffer layer(151) is formed in the first area above the package body. The light emitting structure including the group III and 5 family compound semiconductor layer(152) is formed on the conductive buffer layer. The second electrode(156) is formed on the light emitting structure. The first metal layer is beneath touched of the package body. |
