发明名称 SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, COMPUTER PROGRAM PRODUCT, AND EXPOSURE-PARAMETER CREATING METHOD
摘要 A semiconductor-device manufacturing method includes: correcting a systematic component of process proximity effect, which occurs in a process other than exposure processing to thereby set a target pattern after exposure; adjusting an exposure parameter such that a difference between a dimension of the target pattern and a pattern dimension after the exposure is within tolerance; and forming, when an exposure margin calculated from the exposure parameter by using the exposure the random component of fluctuation in the process proximity effect is within the tolerance, a pattern on a semiconductor substrate with the adjusted exposure parameter.
申请公布号 US2010216064(A1) 申请公布日期 2010.08.26
申请号 US20100683943 申请日期 2010.01.07
申请人 TAKIMOTO MICHIYA;MASHITA HIROMITSU;KOTANI TOSHIYA 发明人 TAKIMOTO MICHIYA;MASHITA HIROMITSU;KOTANI TOSHIYA
分类号 G03F7/20;G03F1/36;G03F1/68;G03F1/70;G06F17/50;H01L21/027 主分类号 G03F7/20
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