发明名称 |
SEMICONDUCTOR-DEVICE MANUFACTURING METHOD, COMPUTER PROGRAM PRODUCT, AND EXPOSURE-PARAMETER CREATING METHOD |
摘要 |
A semiconductor-device manufacturing method includes: correcting a systematic component of process proximity effect, which occurs in a process other than exposure processing to thereby set a target pattern after exposure; adjusting an exposure parameter such that a difference between a dimension of the target pattern and a pattern dimension after the exposure is within tolerance; and forming, when an exposure margin calculated from the exposure parameter by using the exposure the random component of fluctuation in the process proximity effect is within the tolerance, a pattern on a semiconductor substrate with the adjusted exposure parameter.
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申请公布号 |
US2010216064(A1) |
申请公布日期 |
2010.08.26 |
申请号 |
US20100683943 |
申请日期 |
2010.01.07 |
申请人 |
TAKIMOTO MICHIYA;MASHITA HIROMITSU;KOTANI TOSHIYA |
发明人 |
TAKIMOTO MICHIYA;MASHITA HIROMITSU;KOTANI TOSHIYA |
分类号 |
G03F7/20;G03F1/36;G03F1/68;G03F1/70;G06F17/50;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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