发明名称 |
PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF |
摘要 |
A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer.
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申请公布号 |
US2010213432(A1) |
申请公布日期 |
2010.08.26 |
申请号 |
US20090468699 |
申请日期 |
2009.05.19 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE;POWERCHIP SEMICONDUCTOR CORP.;NANYA TECHNOLOGY CORPORATION;PROMOS TECHNOLOGIES INC.;WINBOND ELECTRONICS CORP. |
发明人 |
CHUANG JEN-CHI;HUANG MING-JENG;LEE CHIEN-MIN;LIN JIA-YO;WANG MIN-CHIH |
分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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地址 |
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