| 摘要 |
<p>Provided is a surface examining device enabling accurate detection of the surface state of a wafer, such as a defect in the uppermost layer and a variation of the CD value, using even diffracted light influenced by the base. The surface examining device (1) is configured so that an illuminating optical system (10) projects onto the surface of a wafer (5) a first illuminating light beam striking the surface of the wafer (5) at a high incident angle at which the first illuminating light beam is sensitive to a variation of the surface state of the wafer (5) and a second illuminating light beam striking the surface of the wafer (5) at a low incident angle at which the second illuminating light beam is insensitive thereto, a detection optical system (20) detects diffracted light produced in the case of the high incident angle and diffracted light produced in the case of the low incident angle, respectively, and a computing unit (30) determines the CD value after correcting the influence of the lower layers of the wafer (5) on the basis of the information relating to the diffracted light produced in the case of the high indecent angle and detected by the detection optical system (20) and the information relating to the diffracted light produced in the case of the low incident angle and detected thereby.</p> |
