| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a memory circuit device with a reduced area by making a chip size compact. <P>SOLUTION: In the memory circuit device, memory cells A are arranged in a matrix, and a memory cell B to memorize information of whether writing in the memory cells A of each column has been completed or not, and a circuit to select the column by using memorized information of the memory cell B are provided for each column. After the writing in the memory cells A of a column has been completed, writing of writing completion information in the memory cell B to memorize writing information in the column is performed, and the column changes from a selected state to a non-selected state by using the change of the memorized information of the memory cell B caused by the writing, and the next column changes from a non-selected state to a selected state so as to make writing in the next column possible. By repeating the operations, columns to which writing is to be performed are sequentially selected. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
