| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of prescribing the direction of the dislocation line of threading dislocation to restrain deterioration of device characteristic and lowering of yield. Ž<P>SOLUTION: In this SiC semiconductor unit, the direction of the dislocation line of threading dislocation 3 is aligned so that the angle θ between the direction of the dislocation line of threading dislocation 3 and [0001]c axis becomes not greater than 22.5°. Since the threading dislocation 3 having the dislocation line in the direction of [0001]c axis is perpendicular to the direction of the dislocation line of basal surface dislocation, it does not become an extended dislocation in surface C and does not generate stacking fault. Therefore, if an electronic device is formed to a SiC single crystal substrate 1 whose direction of the dislocation line of threading dislocation is [0001]c axis, good device characteristic, no deterioration and an enhanced yield can be attained. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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