| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device which can suppress leakage current which flows toward a gate electrode, in a second nitride semiconductor layer. SOLUTION: A fluorine region 50A is provided, in a region immediately under a source electrode 10 and in a region immediately under a drain electrode 20 in the second nitride semiconductor layer 2. Negative charges exist due to fluorine in the fluorine region 50A. Because of the negative charges, current is less apt to flow in the fluorine region 50A, which makes it possible to suppress the current flowing inside the second nitride semiconductor layer 2. COPYRIGHT: (C)2010,JPO&INPIT
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