THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD FOR THE SAME
摘要
<p>PURPOSE: A thin film transistor panel and a manufacturing method thereof are provided to minimize stress applied to a thin film transistor by including flexibility. CONSTITUTION: A buffer layer(20) is formed on a substrate. A plurality of thin film transistors(10) is formed on a buffer layer and includes an oxide semiconductor layer. A bridge connects adjacent thin film transistors. A protection layer is formed on the bridge and the plurality of thin film transistors. The bridge has a wrinkled pattern(P).</p>
