发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS
摘要 PURPOSE: A method for manufacturing a semiconductor device and an apparatus for processing a substrate are provided to select a catalyst for forming an oxide film or a nitride film on the surface of the substrate according to an acid dissociation constant. CONSTITUTION: A wafer(200) is loaded in a cassette(110). A cassette stage(114) is installed in a case shaped main body(111). A cassette shelf(105) is installed on the center part of the case shaped main body. A plurality of cassettes is stored in the cassette shelf. A reserve cassette shelf(107) is installed at the upper side of the cassette stage. A cassette transferring unit(118) is installed between the cassette stage and the cassette shelf.
申请公布号 KR20100094408(A) 申请公布日期 2010.08.26
申请号 KR20100014266 申请日期 2010.02.17
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 MIZUNO NORIKAZU
分类号 H01L21/205 主分类号 H01L21/205
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