发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS |
摘要 |
PURPOSE: A method for manufacturing a semiconductor device and an apparatus for processing a substrate are provided to select a catalyst for forming an oxide film or a nitride film on the surface of the substrate according to an acid dissociation constant. CONSTITUTION: A wafer(200) is loaded in a cassette(110). A cassette stage(114) is installed in a case shaped main body(111). A cassette shelf(105) is installed on the center part of the case shaped main body. A plurality of cassettes is stored in the cassette shelf. A reserve cassette shelf(107) is installed at the upper side of the cassette stage. A cassette transferring unit(118) is installed between the cassette stage and the cassette shelf.
|
申请公布号 |
KR20100094408(A) |
申请公布日期 |
2010.08.26 |
申请号 |
KR20100014266 |
申请日期 |
2010.02.17 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
MIZUNO NORIKAZU |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|