| 摘要 |
PURPOSE: The semiconductor luminescent device manufacturing method is proceed the planarization process after the plating of the conductivity supporting member. The it electricals, property of chip is improved. CONSTITUTION: The light emitting structure including the first conductivity type semiconductor layer(110) on substrate, and the active layer(120) and the second electrical conduction semiconductor layer(130) is formed. The first electrode(115) is formed under the first conductivity type semiconductor layer. The electrode layer(150) is formed on the second electrical conduction semiconductor layer. The conductivity supporting member(170) is formed on the electrode layer. |
