| 摘要 |
PROBLEM TO BE SOLVED: To provide a protective function for preventing breakage of a semiconductor device, and to improve the withstand voltage of the semiconductor device, in a horizontal semiconductor device. SOLUTION: A trench 16 is formed on a wafer surface between an n+ emitter region 6 and a p+ collector region 12, and the inside thereof is embedded with a trench embedding insulation film 17. A p-type floating region 13 is arranged on the wafer surface between the n+ emitter region 6 and the trench 16. Thereby, a p-type floating region 13 being a protective function for detecting abnormality of this semiconductor device is provided, and a drift region for supporting the withstand voltage is bent by the trench 16 to increase an effective drift length. In a first switch arranged in a protective circuit of such a semiconductor circuit, a gate threshold voltage of the semiconductor device and a turn-on time not smaller than the turn-on time of the semiconductor device are set. The gate voltage of the semiconductor device is controlled by detecting the voltage of the p-type floating region 13 by the first switch. COPYRIGHT: (C)2010,JPO&INPIT |
