发明名称 |
Nonvolatile Memory Device and Method of Forming the Same |
摘要 |
A nonvolatile memory device includes a device isolation pattern, a charge trap layer, and a plurality of word lines. The device isolation pattern defines an active region in a semiconductor substrate and extends in a first direction. The charge trap layer covers the active region and the device isolation pattern. The word lines on the charge trap layer cross the active region and extend in a second direction. The charge trap layer disposed in a first region where the word line and the active region cross each other has a different nitrogen content ratio from the charge trap layer disposed in a second region surrounding the first region.
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申请公布号 |
US2010213536(A1) |
申请公布日期 |
2010.08.26 |
申请号 |
US20100703066 |
申请日期 |
2010.02.09 |
申请人 |
NAKANISHI TOSHIRO;PARK CHANJIN;CHOI SIYOUNG;KOO BONYOUNG |
发明人 |
NAKANISHI TOSHIRO;PARK CHANJIN;CHOI SIYOUNG;KOO BONYOUNG |
分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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