发明名称 MEMORY CIRCUIT AND METHOD OF ACCESSING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a memory circuit, a system, and a method of providing an equalized voltage on bit lines, relating to a semiconductor circuit. SOLUTION: The memory circuit includes: at least a memory cell which stores the charge showing data and is connected to a word line and a first bit line of a bit line pair; at least one bit line equalizer transistor connected between the first bit line and the second bit line of a bit line pair; and a bit line equalizer circuit connected to the bit line equalizer transistor and built to supply pulses to it in order to substantially equalize the voltages of the first bit line and the second bit line, during the waiting period before the access cycle of the memory cell. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010186535(A) 申请公布日期 2010.08.26
申请号 JP20100026699 申请日期 2010.02.09
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD 发明人 HSU KUOYUAN;JUNG TAEHYUNG;RYU DOUK HYOUN;KIM YOUNG SUK
分类号 G11C11/4091 主分类号 G11C11/4091
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