REPLACING DEFECTIVE MEMORY BLOCKS IN RESPONSE TO EXTERNAL ADDRESSES

摘要

Electronic systems and methods of operating memory devices are provided. In one such embodiment, a memory device (100) receives an external address that addresses a non-defective memory block (2103) of a sequence of memory blocks (210) of the memory device (100) in place of a defective memory block (2102) of the sequence of memory blocks (210) such that the non-defective memory block (2103) replaces the defective memory block (2102). The non-defective memory block (2103) is a proximate non-defective memory block following the defective memory block (2102) in the sequence of memory blocks (210) that is available to replace the defective memory block (2102).