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发明名称
STRUCTURES AND METHODS FOR IMPROVING TRENCH-SHIELDED SEMICONDUCTOR DEVICES AND SCHOTTKY BARRIER RECTIFIER DEVICES
摘要
Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described.
申请公布号
WO2010096261(A2)
申请公布日期
2010.08.26
申请号
WO2010US22830
申请日期
2010.02.02
申请人
FAIRCHILD SEMICONDUCTOR CORPORATION;GREBS, THOMAS E.;RINEHIMER, MARK;YEDINAK, JOSEPH;PROBST, DEAN E.;DOLNY, GARY;BENJAMIN, JOHN
发明人
GREBS, THOMAS E.;RINEHIMER, MARK;YEDINAK, JOSEPH;PROBST, DEAN E.;DOLNY, GARY;BENJAMIN, JOHN
分类号
H01L29/872;H01L21/027;H01L29/78
主分类号
H01L29/872
代理机构
代理人
主权项
地址
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