发明名称 STRUCTURES AND METHODS FOR IMPROVING TRENCH-SHIELDED SEMICONDUCTOR DEVICES AND SCHOTTKY BARRIER RECTIFIER DEVICES
摘要 Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described.
申请公布号 WO2010096261(A2) 申请公布日期 2010.08.26
申请号 WO2010US22830 申请日期 2010.02.02
申请人 FAIRCHILD SEMICONDUCTOR CORPORATION;GREBS, THOMAS E.;RINEHIMER, MARK;YEDINAK, JOSEPH;PROBST, DEAN E.;DOLNY, GARY;BENJAMIN, JOHN 发明人 GREBS, THOMAS E.;RINEHIMER, MARK;YEDINAK, JOSEPH;PROBST, DEAN E.;DOLNY, GARY;BENJAMIN, JOHN
分类号 H01L29/872;H01L21/027;H01L29/78 主分类号 H01L29/872
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