SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

A semiconductor light-emitting element comprising: a multilayer structure (1s) having a first semiconductor layer (1), a second semiconductor layer (2) and a light-emitting layer (3) arranged between the first semiconductor layer and the second semiconductor layer; a first electrode (7); a second electrode (4o); a third electrode (4s); and a fourth electrode (4p).  The first electrode is electrically connected to the first semiconductor layer.  The second electrode forms an ohmic contact with the second semiconductor layer, and transmits the light emitted from the light-emitting layer.  The third electrode penetrates the second electrode and is electrically connected thereto, while forming a Schottky contact with the second semiconductor layer.  The fourth electrode is formed on a side of the third electrode, which is the reverse side of the second semiconductor layer-side thereof, and has the same planar shape as the third electrode when viewed from the lamination direction of the multilayer structure.  Consequently, the semiconductor light-emitting element has improved light-extraction efficiency, while having improved current injection efficiency.  A semiconductor light-emitting device and a method for manufacturing a semiconductor light-emitting element are also disclosed.