MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC RANDOM ACCESS MEMORY

摘要

Disclosed is a magnetoresistive effect element which is provided with a magnetizable layer, a non-magnetic insert layer provided adjacent to the magnetizable layer, a magnetic insert layer provided adjacent to the non-magnetic insert layer on the side opposite the magnetizable layer, a spacer layer provided adjacent to the magnetic insert layer on the side opposite the non-magnetic insert layer, and a first fixed magnetization layer provided adjacent to the spacer layer on the side opposite the magnetic insert layer. The magnetizable layer and the first fixed magnetization layer have a magnetization component approximately perpendicular to the film surface. The magnetizable layer is provided with two fixed magnetization sections and a magnetic domain wall displacement section arranged between the two fixed magnetization sections. The magnetizations of the two fixed magnetization sections are fixed approximately perpendicularly to the film surface in an anti-parallel orientation to each other. The magnetic domain wall displacement section is magnetically anisotropic in the direction perpendicular to the film surface.