| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus reducing an exhaust time. <P>SOLUTION: An etching processing apparatus 10 includes: a processing chamber PC for converting gas introduced from a gas supply source 140 to plasma to subject a wafer W to plasma processing in the inside; an exhaust chamber EC communicating with the inside of the processing chamber PC for exhausting the gas converted to plasma in the processing chamber PC; and a vacuum cover 200 provided for the exhaust chamber EC for blocking communication between the inside of the processing chamber PC and the inside of the exhaust chamber EC. <P>COPYRIGHT: (C)2010,JPO&INPIT |
