COMPOSITION FOR CHEMICAL-MECHANICAL POLISHING SLURRY

摘要

A composition for chemical-mechanical polishing slurry is disclosed, wherein the polishing rate and selectivity with respect to a metal film are improved. The composition for chemical-mechanical polishing slurry comprises an oxidant, an anticorrosive agent, an organic acid and/or organic amino compounds, water, and one or more polishing enhancers selected from a group consisting of selenium compounds, tellurium compounds, and sulfur compounds. Preferably, the content of the polishing enhancers is 0.001 to 5 wt % of the total slurry composition, and the composition for chemical-mechanical polishing slurry has a pH level of 2 to 6.