NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METH0D FOR MANUFACTURING SAME

摘要

PURPOSE: A non-volatile semiconductor memory and a method for manufacturing the same are provided to secure a curvature on the channel of a NAND string by dividing a through hole with a planar circuit shape. CONSTITUTION: A semiconductor substrate is composed of mono-crystalline silicon. A plurality of insulating films is formed on the semiconductor substrate. A laminate is formed on the semiconductor substrate. An electrode film(WL) and insulating films are alternately stacked to form the laminate. A first charge storing layer(CT1) is formed between the electrode film and a first semiconductor filler(SP1). A second charge storing layer(CT2) is formed between the electrode film and a second semiconductor filler(SP2).