| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist having a replaceable surface which prevents the occurrence of defects on a semiconductor substrate. <P>SOLUTION: A method for performing a lithographic process on a semiconductor substrate includes steps of applying a resist onto the substrate, then performing a baking treatment before exposure to light, and performing exposure to light and development. In the method, the resist is separated into a first layer and a second layer, during the application of the resist and the baking treatment, and after development, the second layer becomes lower by at least 0.001 nm than the first layer. The resist, preferably, contains a photosensitive polymer, a photoacid generator, a base quencher, and a phase conversion-type polymer. <P>COPYRIGHT: (C)2010,JPO&INPIT |
