| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a light emitting element reduced in stress in a wafer bonding interface and improved in luminance and reliability. <P>SOLUTION: This method for manufacturing a light emitting element includes: a process of forming a first multilayered body including a first substrate, a first semiconductor layer provided on the first substrate and having a light emitting layer, and a first metal layer provided on the first semiconductor layer; a process of forming a second multilayered body including a second substrate having a thermal expansion coefficient different from that of the first substrate, and a second metal layer provided on the second substrate; a first bonding process of heating the first metal layer and the second metal layer while being in contact with each other; a process of removing the first substrate after the first bonding process; and a second bonding process of performing, after the removing process, heating the first and second metal layers at a temperature higher than the temperature of the first bonding process. <P>COPYRIGHT: (C)2010,JPO&INPIT |
