| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for composite bonding of a seed crystal for growing a SiC single crystal by a solution growth technique, whereby high growth speed can be achieved by preventing breaking and separation of the seed crystal when growing the SiC single crystal by the solution growth technique. Ž<P>SOLUTION: In the method for composite bonding of the seed crystal 7 for growing the SiC single crystal by the solution growth technique, the seed crystal 7 is placed at the tip of a carbon rod 1, the carbon rod 1 is obtained by bonding an anisotropic carbon material 8 coaxially oriented with the carbon rod 1 to an isotropic carbon material 9, and a disposition location at which the isotropic carbon material 9 is bonded to the seed crystal 7 is provided. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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