发明名称 MASK VAPOR DEPOSITION SYSTEM, VAPOR DEPOSITION MASK AND MASK VAPOR DEPOSITION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a mask vapor deposition system where the superimposed structure between the substrate to be treated and a vapor deposition mask is improved so as to improve the lightening of the vapor deposition mask and film deposition precision; to provide a vapor deposition mask; and to provide a mask vapor deposition method. Ž<P>SOLUTION: In the mask vapor deposition system, a substrate supporting face 55 at which the face 200b on the side opposite to the face 200a to be film-deposited in the substrate 200 to be treated is superimposingly arranged, and a magnet unit 50 provided with magnets 52 are used. After the face 200b on the side opposite to the face 200a to be film-deposited in the substrate 200 to be treated is superimposingly arranged to the substrate supporting face 55 in the magnet unit 50, when a metallic vapor deposition mask 40 is superimposingly arranged on the face 200a to be film-deposited in the substrate 200 to be treated, by magnetic attraction force by the magnets 52 provided at the magnet unit 50, the vapor deposition mask 40 is attracted on the magnet unit 50 in such a manner that the substrate 200 to be treated is held between the vapor deposition mask 40 and the substrate supporting face 55. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010185107(A) 申请公布日期 2010.08.26
申请号 JP20090029915 申请日期 2009.02.12
申请人 SEIKO EPSON CORP 发明人 IKEHARA TADAYOSHI
分类号 C23C14/04 主分类号 C23C14/04
代理机构 代理人
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