| 摘要 |
PROBLEM TO BE SOLVED: To provide a lateral semiconductor device that prevents the overheat of a gate region. SOLUTION: The semiconductor device 100 is a lateral semiconductor device having a planer gate electrode 26. A drift region 22 includes: a first part 20 contacting with a side of a body region 38 and existing up to a side of the gate electrode 26 viewed in a planar view; and a second part 19 separated from the body region 38 by the first part 20. The first part 20 has a constant impurity concentration in a direction connecting a pair of main electrode 2, 32. The second part 19 has an increased impurity-concentration region 10 where an impurity concentration increases with distance away from the first part 20 in a direction connecting a pair of main electrodes 2, 32. COPYRIGHT: (C)2010,JPO&INPIT
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