发明名称 DIELECTRIC ENHANCEMENTS TO CHIP-TO-CHIP CAPACITIVE PROXIMITY COMMUNICATION
摘要 A method for improving signal levels between capacitively-coupled chips in proximity communication (PxC) includes depositing a high permittivity dielectric material layer over a signal pad of a first chip, and placing a second chip in close proximity to the first chip such that faces of the signal pads align to enable for capacitive signal coupling. The high permittivity dielectric material layer that fills at least a portion of a gap between the first chip and the second chip, and improves capacitive coupling between signal pads of the first chip and the second chip by providing for an increased permittivity in the gap between the first chip and the second chip. The increased permittivity ensures that electric fields are substantially confined to a space between the signal pad of the first chip and the signal pad of the second chip.
申请公布号 US2010213606(A1) 申请公布日期 2010.08.26
申请号 US20090391912 申请日期 2009.02.24
申请人 SUN MICROSYSTEMS, INC. 发明人 KRISHNAMOORTHY ASHOK;CUNNINGHAM JOHN E.
分类号 H01L23/29;H01L21/02 主分类号 H01L23/29
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