发明名称 |
SI INGOT ETCHING METHOD BY WET STATION |
摘要 |
PURPOSE: The ingot etching method for using the wet cleaning equipment in order to eliminate the damage layer in the silicon ingot processing for the solar battery and reduce the inferiority circulates etchant on the circulation tank and the chemical bath. The etching efficiency is maximized. CONSTITUTION: In the wet station is the rinse bath the ingot, transfer to the chemical bath(2). The etchant circulates the chemical bath and circulation tank in etching. The deionized water is provided to the rinse bath of the wet station. The temperature within the chemical bath is set. Ingot installs to the jig.
|
申请公布号 |
KR20100093840(A) |
申请公布日期 |
2010.08.26 |
申请号 |
KR20090012949 |
申请日期 |
2009.02.17 |
申请人 |
NEOSEMITECH INC. |
发明人 |
SHIM, EUN BO;CHOI, YOUNG CHUL;SONG, JOON SUK;OH, MYUNG HWAN |
分类号 |
H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|