| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an AlGaInP-based epitaxial wafer for a light emitting diode whose in-plane white turbidity is small and which has a flat surface and reduces running costs for a disposal system member and a fault removal device, and a method of manufacturing the same. <P>SOLUTION: In the epitaxial wafer for the light emitting diode which has, on an n-type substrate 2, at least an n-type clad layer 4 made of an AlGaInP-based material, an active layer 5, a p-type clad layer 6, and a p-type current dispersion layer 7 made of GaP, the current dispersion layer 7 made of GaP comprises a lower current dispersion layer 7a grown at a V/III ratio of ≥50 on the p-type clad layer 6 and an upper current dispersion layer 7b grown at a V/III ratio of ≥30 to <50 on the lower current dispersion layer 7a. <P>COPYRIGHT: (C)2010,JPO&INPIT |
