| 摘要 |
<P>PROBLEM TO BE SOLVED: To independently control and reduce nonuniform deposition of C atoms on a channel part and accumulation of C atoms in an oxide film. Ž<P>SOLUTION: The surface of a semiconductor substrate is thermally oxidized to grow a thin thermally-oxidized film, and silicon of a film thickness obtained to satisfy a relationship of (desired silicon dioxide SiO<SB>2</SB>insulation film thickness)=(film thickness of the thermally-oxidized film)+(100/44 times of deposited silicon film thickness) is deposited on the thermally-oxidized film. By thermally oxidizing the deposited silicon, a silicon dioxide SiO<SB>2</SB>insulation film of a desired film thickness is obtained. A gate electrode is deposited and patterned on the silicon dioxide SiO<SB>2</SB>insulation film, and a source and a drain are formed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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