METAL OXIDE SEMICONDUCTOR DEVICES HAVING DOPED SILICON-COMPRISING CAPPING LAYERS AND METHODS OF MANUFACTURING THE SAME

摘要

Methods are provided for forming a semiconductor device (10, 100) comprising a semiconductor substrate (14, 110). In one embodiment, the method includes the steps of: forming a high-k dielectric layer (24, 140) overlying the semiconductor substrate; forming a metal-comprising gate layer (48, 166) overlying the high-k dielectric layer; forming a doped silicon-comprising capping layer (52, 170) overlying the metal-comprising gate layer; and depositing a silicon-comprising gate layer (60, 178) overlying the doped silicon-comprising capping layer.