| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device which increases a transfer efficiency, a method of manufacturing the imaging device, and an electronic device to which the solid-state imaging device is applied. Ž<P>SOLUTION: The solid-state imaging device has light receivers 2, vertical transfer channels 11, transfer electrodes 8, and shunt wiring lines 9. The device also has resistance elements R connected to the associated shunt wiring lines 9. Since the resistance elements R are connected to the shunt wiring lines 9, a total value of resistances of the shunt wiring lines 9 can be adjusted. This causes the adjustment of bluntness of waveforms of transfer pulses transmitted through the transfer electrodes 8 and the shunt wiring lines 9, thus preventing reduction of the transfer efficiency. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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