NANOWIRE MESH DEVICE AND METHOD OF FABRICATING SAME
摘要
<p>A semiconductor structure is provided that includes a plurality of vertically stacked and vertically spaced apart semiconductor nanowires (e.g., a semiconductor nanowire mesh) located on a surface of a substrate. One end segment of each vertically stacked and vertically spaced apart semiconductor nanowires is connected to a source region and another end segment of each vertically stacked and vertically spaced apart semiconductor nanowires is connected to a drain region. A gate region including a gate dielectric and a gate conductor abuts the plurality of vertically stacked and vertically spaced apart semiconductor nanowires, and the source regions and the drain regions are self-aligned with the gate region.</p>
申请公布号
WO2010094360(A1)
申请公布日期
2010.08.26
申请号
WO2009EP66922
申请日期
2009.12.11
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM UNITED KINGDOM LIMITED;CHANG, JOSEPHINE;BEDELL, STEPHEN;CHANG, PAUL;GUILLORN, MICHAEL;SLEIGHT, JEFFREY