| 摘要 |
<p>PURPOSE: A lithography method and a lithography apparatus using a charged-particle beam are provided to improve the precision of a lithography process by precisely correcting drift and maintaining the throughput of the lithography process. CONSTITUTION: A stage(3) is located in a chamber(1), and a mask(2) is loaded on the stage. The stage is driven to a X-direction and a Y-direction by a stage driving circuit(4). The transfer position of the stage is measured by a position circuit(5). An electronic-beam optical system(10) is installed on the upper side of the chamber and includes an electron gun(6), lenses(7, 8, 9, 11), and a molding deflector(14).</p> |
