HIGH VOLTAGE DEVICE AND FABRICATION METHOD THEREOF
摘要
<p>PURPOSE: A high voltage device and its manufacture method are provided to decrease capacitance between a drain region and a gate electrode by forming a first gate insulating layer thicker than a second gate insulating layer formed in the side. CONSTITUTION: A drain region is formed in the back side of a substrate. A first gate insulating layer(112C) is formed to be buried from the bottom of a trench(108) to a constant depth. A second gate insulating layer(118) is formed in the side of the trench to the thickness thinner than the first gate insulating layer. A gate electrode(120) is formed on the first and the second gate insulating layer. A source region is formed within the substrate located between trenches.</p>
