发明名称 |
Memory device and wear leveling method thereof |
摘要 |
Disclosed is a memory device including a N VRAM and a page table, and a wear leveling method therefor. The page table includes mapping information which maps virtual addresses of the NVRAM with physical addresses of the NVRAM. A page table entry includes aging information which indicates the wear of a corresponding page. The aging information may be a remaining number of write operations allowed to the page. Whenever data is written in a page, a value indicating a remaining number of write operations allowed to that page is decremented.
|
申请公布号 |
EP2221830(A1) |
申请公布日期 |
2010.08.25 |
申请号 |
EP20100152169 |
申请日期 |
2010.01.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HWANG, JOO-YOUNG;LEE, JAMEE KIM;KIM, HONG-KUG |
分类号 |
G11C16/34;G11C29/00 |
主分类号 |
G11C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|