发明名称 Memory device and wear leveling method thereof
摘要 Disclosed is a memory device including a N VRAM and a page table, and a wear leveling method therefor. The page table includes mapping information which maps virtual addresses of the NVRAM with physical addresses of the NVRAM. A page table entry includes aging information which indicates the wear of a corresponding page. The aging information may be a remaining number of write operations allowed to the page. Whenever data is written in a page, a value indicating a remaining number of write operations allowed to that page is decremented.
申请公布号 EP2221830(A1) 申请公布日期 2010.08.25
申请号 EP20100152169 申请日期 2010.01.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HWANG, JOO-YOUNG;LEE, JAMEE KIM;KIM, HONG-KUG
分类号 G11C16/34;G11C29/00 主分类号 G11C16/34
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