SEMICONDUCTOR DEVICE AND FABFICATING METHOD THE SAMEOF

摘要

PURPOSE: A semiconductor device is provided to prevent the deterioration of a capacitor due to the oxidation of a lower electrode by forming a multiple dielectric layer comprised of a laminate structure of first to third dielectric layers. CONSTITUTION: A lower electrode(210) is formed on a substrate(100). A first dielectric layer(221) is formed on the lower electrode. A second dielectric layer(225) is formed on the first dielectric layer. A third dielectric layer(230) is formed on the second dielectric layer. An upper electrode(250) is formed on the third dielectric layer.