| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that if the sum of the capacity of a capacitor (pixel capacitor) and the capacity between the gate and source of a driving transistor is smaller than the parasitic capacitor of a switching transistor, a change in the value of the potential between the gate and source of the driving transistor is resulted by the amount of change in the source potential of the driving transistor and desired light emission cannot be expected. <P>SOLUTION: The configuration that an anode electrode layer 211 of an organic EL element 21 and capacitor forming layers 231 and 232 forming a capacitor 23 are overlapped in layout is employed for a pixel circuit 11 of the constitution to connect the capacitor 23 between the gate and source of a TFT 22 which is the driving transistor and to selectively connect the source of the TFT 22 to a grounding potential GND through a TFT 25 which is the switching transistor. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
