NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

PURPOSE: A nonvolatile semiconductor memory and its manufacturing method are provided to independently control a memory transistor by differently forming a control gate electrode of all memory transistors belonging to a memory string. CONSTITUTION: A plurality of insulating layers(15) and a membrane electrode assembly is alternately laminated on a laminate(ML). A selection gate electrode is formed on the laminate. A pillar(31) penetrates a control gate electrode and the selection gate electrode. A plurality of source lines is connected the top end part of a part of a semiconductor pillar. A plurality of bit lines is connected to the top end part of the rest of the pillar. A plurality of through holes is formed in the selection gate electrode and insulating layer.