Power semiconductor module and fabrication method thereof

摘要

A power semiconductor module comprises
a power circuit portion having a power semiconductor chip (113, 111) located on an upper surface of a base (108) having a case (500) on an outer periphery of the base;
a printed board (102) with a circuit component mounted thereon, located above the power circuit potion with a space therebetween;
a supporter (1031, 1032) which couples the printed board (102) with a cover plate (105) located on an upper portion of the case (500); and
silicon gel (101) which is filled in the semiconductor module. An elastic coefficient of all or part of the printed board (102) is smaller than that of the cover plate (105).