Flip Chip GaN LED device, comprising a silicon substrate, partially covering an AlN buffer layer.

摘要

A semiconductor structure, and method of manufacture, comprising an electrically conducting silicon substrate 15, and a GaN semiconductor 10 separated by a buffer layer 11, preferably formed from AlN. The substrate 15 and GaN semiconductor 10 are in electrical contact throughout the buffer layer 11. The device is preferably a light emitting diode, arranged in flip chip orientation. The silicon substrate (15) only partially covers the buffer layer. The device also has a protective silicon diode 5, to prevent damage due to reverse connection of the supply.