发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF
摘要 PURPOSE: A semiconductor light emitting device and a manufacturing method thereof are provided to minimize warpage or break of a wafer in a laser scribing or braking by inserting a metal layer into an insulation layer on the outer side of a light emitting structure. CONSTITUTION: A light emitting structure(110) comprises a plurality of compound semiconductor layers. A second electrode layer(130) is formed under the light emitting structure. An isolation layer(121) is formed along the outer boundary between the light emitting structure and the second electrode. A metal layer(123) is formed along the outer side of the isolation layer. An insulation layer(125) is formed on the outer side of the light emitting structure. The insulation layer seals the outer side of the metal layer.
申请公布号 KR20100093340(A) 申请公布日期 2010.08.25
申请号 KR20090012481 申请日期 2009.02.16
申请人 LG INNOTEK CO., LTD. 发明人 JEONG, HWAN HEE
分类号 H01L33/02 主分类号 H01L33/02
代理机构 代理人
主权项
地址