METHOD FOR FORMING COPPER WIRING OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a copper wire of a semiconductor device is provided to prevent the movement of copper ions due to time delay by suppressing the reaction with copper ions on the surface of an oxide layer that is interlayer insulation materials. CONSTITUTION: An interlayer insulation layer(110) with a wire formation region(D) is formed on a semiconductor substrate(100). A copper layer(130) is deposited to fill the wire formation region. A copper layer is removed to expose the interlayer insulation layer with a CMP process. A first chemical cleaning process using a citric acid based first chemical is performed on a copper layer processed with the CMP process. A second chemical cleaning process using an ascorbic acid based chemical is performed on the copper layer.