发明名称 |
Light emitting diode by use of metal diffusion bonding technology and method of producing such light emitting diode |
摘要 |
The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.
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申请公布号 |
US7781755(B2) |
申请公布日期 |
2010.08.24 |
申请号 |
US20090385906 |
申请日期 |
2009.04.23 |
申请人 |
ARIMA OPTOELECTRONICS CORP. |
发明人 |
SUNG YING-CHE;WANG CHAO-HSIN;CHEN YI-HSIUNG;CHIU SHIH-YU |
分类号 |
H01L29/06;H01L33/06;H01L33/22;H01L33/30 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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