| 摘要 |
A direct bonded SOI wafer having an entire buried oxide film layer covered and not exposed is manufactured by: (A) forming a laminated body by laminating a semiconductor wafer and a support wafer via an oxide film; and (B) forming a thin-film single crystal silicon layer on the support wafer using a buried oxide film layer by film-thinning the semiconductor wafer to a predetermined thickness. In a process (C) the entire buried oxide film layer is covered by a main surface on the laminating side of the support wafer and the single crystal silicon layer. The covering of the entire buried film layer is carried out by, between process (A) and (B), removing the oxide film formed on the circumferential end edge of the main surface on the laminating side and the chamfered portion to leave the oxide film only on the laminated surface except the circumferential end edge.
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