| 摘要 |
A method of manufacturing a CMOS image sensor comprising forming a first insulating film on a silicon semiconductor substrate which includes a metal pad; selectively etching the first insulating film, so as to form a first insulating film pattern with a first opening which exposes the metal pad; forming a metal pad protective film in the first opening portion with a predetermined thickness; forming a second insulating film on the first insulating film pattern and metal pad protective film; selectively etching the second insulating film, so as to form a second insulating film pattern which includes a second opening which exposes the metal pad protective film; forming a color filter array (CFA) on the second insulating film pattern; forming micro lenses on the CFA; and performing an etching process in order to remove the metal pad protective film so as to form a metal pad opening.
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