发明名称 |
Stacked film including a semiconductor film having a taper angle, and thin film transistor including the stacked film |
摘要 |
A method for forming a pattern of a stacked film, includes steps (a) to (e). The step (a) is forming sequentially a first base insulating film and a light shielding material on a transparent substrate. The step (b) is patterning the light shielding material to obtain a light shielding film with a first pattern. The step (c) is forming sequentially a second base insulating film, a semiconductor film and a first oxide film on a substrate. The step (d) is forming a resist pattern with a second pattern on the first oxide film. The step (e) is forming a pattern of a stacked film by dry etching the first oxide film and the semiconductor film, above the light shielding film. The stacked film includes the semiconductor film and the first oxide film. The dry etching includes an etching by using an etching gas and the resist pattern as a mask. The semiconductor film includes a taper angle which is controlled to be within predetermined range.
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申请公布号 |
US7781837(B2) |
申请公布日期 |
2010.08.24 |
申请号 |
US20070976265 |
申请日期 |
2007.10.23 |
申请人 |
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发明人 |
SEKO NOBUYA;SHIRAISHI HITOSHI;HAYASHI KENICHI;HIRANO NAOTO;YAMAMOTO ATSUSHI |
分类号 |
H01L27/12;H01L27/01;H01L31/0392 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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